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RJJ0621DPP
P Channel Power MOS FET High Speed Switching
REJ03G1624-0200 Rev.2.00 Jun 16, 2008
Features
* * * * VDSS : -60 V RDS(on) : 56 m (MAX) ID : -25 A Lead Mount Type (TO-220FN)
Outline
RENESAS Package code: PRSS0003AB-A (Package name : TO-220FN)
3
1
1. Gate 2. Drain 3. Source
1
23
2
Application
* DC-DC converter, Motor control, Solenoid control, etc.
Absolute Maximum Ratings
(Tc = 25C)
Item Drain to source voltage Gate to source voltage Drain current (DC) Drain current (Pulsed)*1 Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Note: Symbol VDSS VGSS ID ID(pulse) IAP Pch ch-c Tch Tstg Ratings -60 +10/-20 -25 -50 -25 35 3.57 -55 to +150 -55 to +150 Unit V V A A A W C/W C C Conditions VGS = 0 V VDS = 0 V
L = 100 H
1. Pulse width limited by safe operating area.
REJ03G1624-0200 Rev.2.00 Jun 16, 2008 Page 1 of 6
RJJ0621DPP
Electrical Characteristics
(Tc = 25C)
Item Drain to source breakdown voltage Drain to source leakage current Gate to source leak current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Symbol V(BR)DSS IDSS IGSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDF Min. -60 -- -- -- -1.0 -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- -1.7 45 65 1550 190 100 15 25 100 50 -0.9 Max. -- -1 0.1 -0.1 -2.5 56 95 -- -- -- -- -- -- -- -1.5 Unit V A A A V m m pF pF pF ns ns ns ns V Conditions ID = -10 mA, VGS = 0 V VDS = -60 V, VGS = 0 V VGS = +10 V, VDS = 0 V VGS = -20 V, VDS = 0 V ID = -1 mA, VDS = -10 V ID = -12.5 A, VGS = -10 V ID = -12.5 A, VGS = -4.5 V VDS = -10 V VGS = 0 V f = 1 MHz VDD = -30 V ID = -12.5 A VGS = -10 V RG = 25 IF = -12.5 A, VGS = 0 V
REJ03G1624-0200 Rev.2.00 Jun 16, 2008 Page 2 of 6
RJJ0621DPP
Main Characteristics
Power vs. Temperature Derating
50 -100
10
Maximum Safe Operation Area
Channel Dissipation Pch (W)
0 10
s
Drain Current ID (A)
40
-10
PW
s
=
10
1
30
m s
s m
-1
DC
Operation in this area is limited by RDS(on) Ta = 25C 1 shot Pulse
20
pe O ra
10
-0.1
t io n
0
50
100
150
200
-0.01 -0.1
-1
-10
-100
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
-50
-8 V -7 V -6 V -5 V -4 V
Typical Transfer Characteristics
-30
VDS = -10 V Pulse Test
Drain Current ID (A)
Drain Current ID (A)
-40
-10 V
-20
-30
-20
VGS = -3 V
-10
Tc = 75C
-10
Pulse Test
0
-1
-2
-3
-4
-5
0 0
25C -25C -3 -4 -5
-1
-2
Drain to Source Voltage VDS (V)
Static Drain to Source on State Resistance vs.Gate to Source Voltage
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source On State Resistance RDS(on) (m)
Pulse Test Tc = 25C
Drain to Source On State Resistance RDS(on) (m)
150
1000 Pulse Test Tc = 25C
100
ID = -25 A
100 VGS = -4.5 V -10 V
50
-5 A -12.5 A
0
-2
-4
-6
-8
-10
10 -1
-10
-100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
REJ03G1624-0200 Rev.2.00 Jun 16, 2008 Page 3 of 6
RJJ0621DPP
Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current
Drain to Source On State Resistance RDS(on) (m)
120 100 80 60 40 20
Forward Transfer Admittance |yfs| (S)
VGS = -10 V Pulse Test ID = -25 A
100
Tc = -25C
10
25C 75C
-12.5 A -5 A
1
0 -25
0.1
VDS = -10 V Pulse Test
0
25
50
75
100 125 150
-0.1
-1
-10
-100
Case Temperature Tc (C)
Drain Current ID (A)
Body-Drain Diode Reverce Recovery Time
1000
Typical Capacitance vs. Drain to Source Voltage
1000
VGS = 0 f = 1 MHz Ciss
Reverce Recovery Time trr (ns)
100
Capacitance C (pF)
di/dt = -100 A/ s VGS = 0 V Tc = 25C
100
Coss
10
10
Crss
1 -1
-10
-100
1 -1
-10
-100
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
0
Drain to Source Voltage VDS (V)
0
-10 V
1000
Gate to Source Voltage VGS (V)
ID = -25 A
-20
VDD = -60 V -30 V -10 V
-30 V
-4
Switching Time t (ns)
100
td(off) tf tr td(on)
-40
-8
VDD = -60 V
10
VGS = -10 V, VDD = -30 V PW = 5 s, duty 1% RG = 25
-60
-12
-80 0 8 16 24 32
-16 40
1
-1
-10
-100
Gate Charge Qg (nc)
Drain Current
ID (A)
REJ03G1624-0200 Rev.2.00 Jun 16, 2008 Page 4 of 6
RJJ0621DPP
Reverse Drain Current vs. Source to Drain Voltage
-30
Avalanche Current vs. Case Temperature
-30
L = 100 H
Reverse Drain Current IDR (A)
Avalanche Current IAP (A)
Pulse Test Tc = 25C
-25 -20 -15 -10 -5 0
-20
-5 V
-10 V
-10
VGS = 0, 5 V
0
-0.4
-0.8
-1.2
-1.6
-2.0
25
50
75
100
125
150
175
Source to Drain Voltage VSDF (V)
Case Temperature Tc (C)
Normalized Transient Thermal Impedance s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25C
1
D=1 0.5
0.2 0.1
0.05
0.1
0.01
1shot pulse
0.02
ch - c(t) = s (t) * ch - c ch - c = 3.57C/W, Tc = 25C
PDM PW T
D=
PW T
0.01 100
1m
10 m
100 m
1
10
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor 25 D.U.T. RL VDD = -30 V Vout td(on) Vout Monitor Vin
Switching Time Waveform
10%
90%
90%
10%
90% 10% td(off)
tf
Vin -10 V
tr
REJ03G1624-0200 Rev.2.00 Jun 16, 2008 Page 5 of 6
RJJ0621DPP
Package Dimensions
Package Name TO-220FN JEITA Package Code RENESAS Code PRSS0003AB-A Previous Code MASS[Typ.] 2.0g
Unit: mm
10 0.3
2.8 0.2
15 0.3
3.2 0.2
14 0.5
3.6 0.3
1.1 0.2 1.1 0.2 0.75 0.15 0.75 0.15
2.54 0.25
2.54 0.25
Ordering Information
Part No. RJJ0621DPP-00-T2 Quantity 50 pcs Magazine (Tube) Shipping Container
REJ03G1624-0200 Rev.2.00 Jun 16, 2008 Page 6 of 6
2.6 0.2
4.5 0.2
6.5 0.3
3 0.3
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Colophon .7.2

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